报告题目：pinMOS memory: a novel, diode-based organic memory device
报告人：Dr. Yichu Zheng 德累斯顿工业大学博士
会议ID：146 150 939
Organic memory devices with resistance-switching behaviors have been researched intensively due to their great potential in achieving semitransparent, flexible, and lightweight electronics. However, there are emerging requirements for new applications, like multifunctional integration and low static power consumption, that ask for unique capacitance-switching memory devices with photoelectric properties. In this talk, we will present a new type of programmable organic capacitive memory called p-i-n-metal-oxide-semiconductor (pinMOS) memory. This simple, diode-based pinMOS memory can be written as well as read electrically and optically, with promising performance. A working mechanism that includes a destruction and reconstruction circulation of quasi-steady states will be introduced. Furthermore, we will describe the lateral charging effects in organic doped layers which result in extra leakage currents and show the strategy of suppressing such behaviors in architecture design.
Dr. Yichu Zheng received her B.S and M.S degree in material physics and material engineering, respectively, from East China University of Science and Technology, Shanghai, China. She then completed her Ph.D. at the Center for Advancing Electronics Dresden (CFAED), TU Dresden, Dresden, Germany. Her research focuses on semiconductor optoelectronic materials and devices, with special emphasis on perovskite solar cells, organic light-emitting diodes, and organic memory devices.